HY57V643220CT Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 4 Banks x 512K x 32Bit Synchronous DRAM

CAPACITANCE (TA=25×C, f=1MHz, VDD=3.3V)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A10, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
DQ0 ~ DQ31
OUTPUT LOAD CIRCUIT
Symbol
Min
CI1
2.5
CI2
2.5
CI/O
4
HY57V643220C
Max
Unit
3.5
pF
3.8
pF
6.5
pF
Output
Vtt=1.4V
RT=500 Ω
30pF
Output
Z0 = 50Ω
Vtt=1.4V
RT=50 Ω
30pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (DC operating conditions unless otherwise noted)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-1
-1
2.4
-
Note :
1.VIN = 0 to 3.6V, All other pins are not under test = 0V
2.DOUT is disabled, VOUT=0 to 3.6V
Max
1
1
-
0.4
Unit
uA
uA
V
V
Note
1
2
IOH = -2mA
IOL = +2mA
Rev. 0.8/Aug. 02
5