HY57V641620HG-I Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A11, BA0, BA1, CKE, CS, RAS,
CAS, WE, UDQM, LDQM
DQ0 ~ DQ15
OUTPUT LOAD CIRCUIT
Symbol
Min
CI1
2
CI2
2.5
CI/O
2
HY57V641620HG
Max
Unit
4
pF
5
pF
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA= -40 to 85°C, VDD=3.3±0.3V^Note3)
Parameter
Symbol
Min.
Max
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
-1
1
-1
1
2.4
-
-
0.4
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6
Unit
uA
uA
V
V
Note
1
2
IOH = -4mA
IOL = +4mA
Rev. 1.0/Jan. 02
5