HY57V641620HG-I Datasheet, PDF (10/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG-I Series
4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG(L)T-8I
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
125MHz(8ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
6ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
3CLKs
6ns
83MHz(12ns)
3CLKs
3CLKs
6CLKs
9CLKs
2CLKs
6ns
HY57V641620HG(L)T-PI
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
HY57V641620HG(L)T-SI
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
100MHz(10ns)
3CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
tOH
2.0ns
2.0ns
2.0ns
tOH
2.0ns
2.0ns
2.0ns
tOH
2.0ns
2.0ns
2.0ns
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 1.0/Jan. 02
10