HY57V641620HG-I Datasheet, PDF (11/12 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

COMMAND TRUTH TABLE
HY57V641620HG
Command
CKEn-1 CKEn CS
Mode Register Set
H
No Operation
H
Bank Active
H
Read
H
Read with Autoprecharge
Write
H
Write with Autoprecharge
Precharge All Banks
H
Precharge selected Bank
Burst Stop
H
DQM
H
Auto Refresh
H
Burst-READ-Single-
WRITE
H
Entry
H
Self Refresh¹
Exit
L
Entry
H
Precharge
power down
Exit
L
Clock
Suspend
Entry
H
Exit
L
X
L
H
X
L
X
L
X
L
X
L
X
L
X
L
H
L
X
L
L
L
H
H
L
H
L
L
H
H
L
H
L
L
H
RAS CAS
L
L
X
X
H
H
L
H
H
L
H
L
L
H
H
H
X
L
L
L
L
L
L
X
X
H
H
X
X
H
H
X
X
H
H
X
X
V
V
X
WE
DQM ADDR
A10/
AP
BA
L
X
OP code
X
X
X
H
H
X
RA
V
L
H
X
CA
V
H
L
L
X
CA
V
H
H
X
L
X
X
L
V
L
X
X
V
X
H
X
X
L
X
A9 Pin High
(Other Pins OP code)
H
X
X
X
X
H
X
X
H
X
X
X
H
X
X
V
X
X
Note
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
Rev. 1.0/Jan. 02
11