HY27UG088G5M Datasheet, PDF (47/50 Pages) Hynix Semiconductor – 8Gbit (1Gx8bit) NAND Flash

5. APPENDIX : Extra Features
HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
5.1 Addressing for program operation
Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB
(most significant bit) page of the block. Random address programming is prohibited. See Fig. 34.
5.2 Stacked Devices Access
A small logic inside the devices allows the possibility to stack up to 2 devices in a single package without changing the
pinout of the memory. To do this the internal address register can store up to 30⁽¹⁾ addresses(512Mbyte addressing
field) and basing on the 2 MSB pattern each device inside the package can decide if remain active (1 over 4 ) or “hang
up” the connection entering the Stand-By.
Rev. 0.6 / Dec. 2006
47