HY27UG088G5M Datasheet, PDF (20/50 Pages) Hynix Semiconductor – 8Gbit (1Gx8bit) NAND Flash

HY27UG088G(5/D)M Series
8Gbit (1Gx8bit) NAND Flash
Parameter
Valid Block Number
Symbol
Min
Typ
NVB
8032
Table 6: Valid Blocks Number
Max
8192
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/512bytes)
Unit
Blocks
Symbol
Parameter
TA
TBIAS
TSTG
VIO⁽²⁾
Vcc
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industry Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Value
3.3V
0 to 70
-25 to 85
-40 to 85
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
Unit
℃
℃
℃
℃
℃
V
V
Table 7: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev. 0.6 / Dec. 2006
20