HY62SF16201A Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

HY62SF16201A
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
1.7
Vss
Ground
0
VIH
Input High Voltage
1.4
VIL
Input Low Voltage -0.3(1)
Note :
1. VIL = -1.5V for pulse width less than 30ns
2. Typical values is not 100% tested
Typ.
1.8
0
-
-
Max. Unit
2.3
V
0
V
Vcc+0.3 V
0.4
V
DC ELECTRICAL CHARACTERISTICS
Vcc = 1.7V~2.3V, TA = 0°C to 70°C/-40°C to 85°C (I)
Symbol
Parameter
Test Condition
ILI
Input Leakage Current
Vss < VIN < Vcc
ILO
Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL,
/UB = /LB = VIH
Icc
Operating Power Supply /CS = VIL, VIN = VIH or VIL,
Current
II/O = 0mA
ICC1
Average Operating
Cycle Time=Min.100% duty,
Current
/CS = VIL,VIN = VIH or VIL, II/O = 0mA,
Cycle time = 1us,
/CS < 0.2V, VIN<0.2V, II/O = 0mA,
ISB
Standby Current
/CS = VIH or
(TTL Input)
/UB = /LB = VIH, VIN = VIH or VIL
ISB1
Standby Current
/CS > Vcc - 0.2V or
SL
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
VIN > Vcc - 0.2V or
LL
VIN < Vss + 0.2V
VOL
Output Low Voltage
IOL = 0.1mA
VOH
Output High Voltage
IOH = -0.1mA
Notes :
1. Typical values are at Vcc = 1.8V, TA = 25°C
2. Typical values are sampled and not 100% tested
Min.
-1
-1
-
-
-
-
-
-
1.6
Typ.
-
-
-
-
-
-
0.5
-
-
Max.
1
1
3
20
3
0.15
1
3
0.2
-
Unit
uA
uA
mA
mA
mA
mA
uA
uA
V
V
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
Condition Max. Unit
CIN
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE) VIN = 0V
8
pF
COUT
Output Capacitance(I/O)
VI/O = 0V
10
pF
Note :
1. These parameters are sampled and not 100% tested
Rev.06 /Mar. 2002
3