HY62SF16201A Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

HY62SF16201A
ORDERING INFORMATION
Part No.
Speed
HY62SF16201ALLF
85/100/120
HY62SF16201ALLF
85/100/120
HY62SF16201ALLF-I 85/100/120
HY62SF16201ALLF-I 85/100/120
Note :
1. Blank : Commercial, I : Industrial
Power
LL-part
SL-part
LL-part
SL-part
Temp.
I
I
Package
FBGA
FBGA
FBGA
FBGA
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.2 to 3.6
V
Vcc
Power Supply
-0.2 to 4.6
V
TA
Operating Temperature
0 to 70
°C
HY62SF16201A
-40 to 85
°C
HY62SF16201A-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time 260 • 10
°C • sec
Note :
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE /OE /LB /UB
Mode
I/O
I/O1~I/O8 I/O9~I/O16
H
X
X X X Deselected
High-Z
High-Z
X
X
X H H Deselected
High-Z
High-Z
L
H
H L X Output Disabled High-Z
High-Z
L
H
H X L Output Disabled High-Z
High-Z
L
H
L
L H Read
DOUT
High-Z
HL
High-Z
DOUT
LL
DOUT
DOUT
L
L
X L H Write
DIN
High-Z
HL
High-Z
DIN
LL
DIN
DIN
Note :
1. H=VIH, L=VIL, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the Upper byte, I/O 9 -I/O 16.
Power
Standby
Standby
Active
Active
Active
Active
Rev.06 /Mar. 2002
2