HY62SF16201A Datasheet, PDF (2/10 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

HY62SF16201A
DESCRIPTION
The HY62SF16201A is a high speed, low power
and 2M bit full CMOS SRAM organized as
131,072 words by 16bit. The HY62SF16201A
uses high performance full CMOS process
technology and designed for high speed low
power circuit technology. It is particularly well
suited for used in high density low power system
application. This device has a data retention mode
that guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup(LL-part)
-. 1.2V(min) data retention
• Standard pin configuration
-. 48-FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62SF16201A
1.7~2.3V 85/100/120
HY62SF16201A-I 1.7~2.3V 85/100/120
Notes :
1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
3
1
3
1
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
BLOCK DIAGRAM
/LB /OE A0 A1 A2 NC
IO9 /UB A3 A4 /CS IO1
IO10 IO11 A5 A6 IO2 IO3
Vss IO12 NC A7 IO4 Vcc
Vcc IO13 NC A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
NC A8 A9 A10 A11 NC
48-FBGA(Top View)
PIN DESCRIPTION
A0
ROW
DECODER
I/O1
MEMORY ARRAY
128K x 16
A16
I/O16
/CS
/OE
/LB
/UB
/WE
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power( 1.7V ~ 2.3V )
Ground
No Connection
Rev.06 /Mar. 2002
2