HY62LF16206B-DT12C Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
2.3
Vss
Ground
0
VIH
Input High Voltage
2.0
VIL
Input Low Voltage -0.3(1)
Note :
1. VIL = -1.5V for pulse width less than 30ns
Typ.
2.5
0
-
-
Max. Unit
2.7
V
0
V
Vcc+0.3 V
0.4
V
HY62LF16206B-DT12C
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.3V~2.7V, TA = 0°C to 70°C
Symbol
Parameter
Test Condition
ILI
Input Leakage Current
Vss < VIN < Vcc
ILO
Output Leakage Current Vss < VOUT < Vcc, /CS1 = VIH or
CS2= VIL, /OE = VIH or /WE = VIL,
or /UB = /LB = VIH
Icc
Operating Power Supply /CS1 = VIL, CS2 = VIH,
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating
Current
Cycle Time=Min.100% duty,
/CS1 = 0.2V, CS2 = Vcc-0.2V,
/WE = Vcc-0.2V, II/O = 0mA
Other Inputs = Vcc-0.2V/0.2V
Cycle time = 1us,
/CS1 < 0.2V, CS2≥Vcc-0.2V,
VIN<0.2V or Vin≥Vcc-0.2V,
II/O = 0mA
ISB
Standby Current
(TTL Input)
/CS1 = VIH, CS2 = VIL
/UB = /LB = VIH, VIN = VIH or VIL
ISB1
Standby Current
(CMOS Input)
/CS1 > Vcc - 0.2V or
CS2 < Vss+0.2V or
/UB = /LB > Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
VOL
Output Low Voltage
IOL = 1.0mA
VOH
Output High Voltage
IOH = -0.5mA
Notes :
1. Typical values are at Vcc = 2.5V, TA = 25°C
2. Typical values are sampled and not 100% tested
Min. Typ. Max. Unit
-1
-
1
uA
-1
-
1
uA
-
-
1 mA
-
-
5 mA
-
-
2 mA
-
-
0.3 mA
-
-
20 uA
-
-
0.4 V
1.8
-
-
V
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
Condition Max. Unit
CIN
Input Capacitance(Add, /CS, /WE, /OE) VIN = 0V
10
pF
COUT
Output Capacitance(I/O)
VI/O = 0V
10
pF
Note :
1. These parameters are sampled and not 100% tested
Rev.00 /Apr. 2003
3