HY62LF16206B-DT12C Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 128Kx16bit full CMOS SRAM

ORDERING INFORMATION
Part No.
HY62LF16206B-DT12C
Speed
120
Power
Temp.
D-part 0℃ ~ 70℃
HY62LF16206B-DT12C
Package
48-TSOP1
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.3 to 3.3
V
Vcc
Power Supply
-0.3 to 3.3
V
TA
Operating Temperature
0 to 70
°C
TSTG
Storage Temperature
-40 to 125
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260 • 10
°C•se
c
Note :
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE /LB /UB
Mode
I/O
I/O1~I/O8 I/O9~I/O16
H
X
X
X XX
High-Z
High-Z
X
L
X
X XX
Deselected
High-Z
High-Z
X
X
X
X HH
High-Z
High-Z
L
L
H
H
H
H
H
H
L
X
X
L
Output Disabled
High-Z
High-Z
High-Z
High-Z
LH
DOUT
High-Z
L
H
H
L HL
Read
High-Z
DOUT
LL
DOUT
DOUT
LH
DIN
High-Z
L
H
L
X HL
Write
High-Z
DIN
LL
DIN
DIN
Note:
1. H=VIH, L=VIL, X=don't care(Vil or Vih)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Power
Standby
Active
Rev.00 /Apr. 2003
2