HY62CT08081E Datasheet, PDF (4/12 Pages) Hynix Semiconductor – 32Kx8bit CMOS SRAM

HY62CT08081E Series
TRUTH TABLE
/CS /WE /OE
Mode
H
X X Standby
L
H H Output Disabled
L
H L Read
L
L X Write
Note
1. H=VIH, L=VIL, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
DC CHARACTERISTICS
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1
-
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
-
-
10
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL,
-
-
50
Min. Duty Cycle = 100%, II/O = 0mA
ISB
TTL Standby Current
/CS= VIH,
-
-
1
(TTL Inputs)
VIN = VIH or VIL
ISB1
CMOS Standby Current
/CS > Vcc - 0.2V,
0~70°C
-
-
10
(CMOS Inputs)
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V -25~85°C or
-
-
20
-40~85°C
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1.0mA
2.4
-
-
Unit
uA
uA
mA
mA
mA
uA
uA
V
V
Note : Typical values are at Vcc =5.0V, TA = 25°C
Rev 04 / Apr. 2001
3