HY62CT08081E Datasheet, PDF (3/12 Pages) Hynix Semiconductor – 32Kx8bit CMOS SRAM

HY62CT08081E Series
ORDERING INFORMATION
Part No.
HY62CT08081E-DPC
HY62CT08081E-DPE
HY62CT08081E-DPI
HY62CT08081E-DGC
HY62CT08081E-DGE
HY62CT08081E-DGI
HY62CT08081E-DTC
HY62CT08081E-DTE
HY62CT08081E-DTI
Speed
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
Power
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
LL-part
Temp
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
Package
PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT Power Supply, Input/Output Voltage
-0.3 to 7.0
V
TA
Operating Temperature HY62CT08081E-C 0 to 70
°C
HY62CT08081E-E -25 to 85
°C
HY62CT08081E-I -40 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time
260 •10
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
4.5
Vss
Ground
0
VIH
Input High Voltage
2.2
VIL
Input Low Voltage
-0.3(1)
Note
1. VIL = -3.0V for pulse width less than 50ns
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.3
0.8
Unit
V
V
V
V
Rev 04 / Apr. 2001
2