HY62CT08081E Datasheet, PDF (2/12 Pages) Hynix Semiconductor – 32Kx8bit CMOS SRAM

HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power
and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Low power consumption
• Battery backup
- 2.0V(min.) data retention
• Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Product
Voltage
No.
(V)
HY62CT08081E-C
5.0
HY62CT08081E-E
5.0
HY62CT08081E-I
5.0
Note 1. Current value is max.
Speed
(ns)
55/70/85
55/70/85
55/70/85
Operation
Current(mA)
10
10
10
Standby Current(uA)
LL
10
20
20
Temperature
(°C)
0~70(Normal)
-25~85(Extended)
-40~85(Industrial)
PIN CONNECTION
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O1 11
I/O2 12
I/O3 13
Vss 14
28
27
26
25
24
23
22
Vcc
/WE
A13
A8
A9
A11
/OE
A14
A12
A7
A6
A5
A4
A3
21 A10 A2
1
2
3
4
5
6
7
8
20 /CS A1 9
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I/O8 A0
I/O7
I/O6
I/O5
I/O4
I/O1
I/O2
I/O3
Vss
10
11
12
13
14
19
18
17
16
15
PDIP
SOP
Vcc
/WE
A13
A8
A9
A11
/OE
/OE
A11
A9
A8
A13
/WE
A10 Vcc
1
2
3
4
5
6
7
/CS A14 8
I/O8 A12 9
I/O7
I/O6
I/O5
I/O4
A7 10
A6 11
A5 12
A4 13
A3 14
28 A10
27 /CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 Vss
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A14
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
BLOCK DIAGRAM
A0
ROW DECODER
I/O1
A14
/CS
/OE
/WE
MEMORY ARRAY
512x512
I/O8
Rev 04 / Apr. 2001
2