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HY5PS56421LF-E3 Datasheet, PDF (4/35 Pages) Hynix Semiconductor – 256Mb DDR2 SDRAM | |||
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1. Description
HY5PS56421(L)F
HY5PS56821(L)F
HY5PS561621(L)F
1.1 Device Features & Ordering Information
1.1.1 Key Features
⢠VDD=1.8V
⢠VDDQ=1.8V +/- 0.1V
⢠All inputs and outputs are compatible with SSTL_18 interface
⢠Fully differential clock inputs (CK, /CK) operation
⢠Double data rate interface
⢠Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
⢠Differential Data Strobe (DQS, DQS)
⢠Data outputs on DQS, DQS edges when read (edged DQ)
⢠Data inputs on DQS centers when write(centered DQ)
⢠On chip DLL align DQ, DQS and DQS transition with CK transition
⢠DM mask write data-in at the both rising and falling edges of the data strobe
⢠All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
⢠Programmable CAS latency 3, 4, 5 and 6 supported
⢠Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
⢠Programmable burst length 4/8 with both nibble sequential and interleave mode
⢠Internal four bank operations with single pulsed RAS
⢠Auto refresh and self refresh supported
⢠tRAS lockout supported
⢠8K refresh cycles /64ms
⢠JEDEC standard 60ball FBGA(x4/x8) & 84ball FBGA(x16)
⢠Full strength driver option controlled by EMRS
⢠On Die Termination supported
⢠Off Chip Driver Impedance Adjustment supported
⢠Read Data Strobe suupported (x8 only)
⢠Self-Refresh High Temperature Entry
Ordering Information
Operating Frequency
Part No.
Grade tCK(ns) CL
Configuration Package
tRCD tRP
HY5PS56421(L)F-X*
-E3
64Mx4
60Ball
5
3
3
3
FBGA
-E4
5
4
4
4
HY5PS56821(L)F-X*
32Mx8
-C4
3.75
4
4
4
HY5PS561621(L)F-X*
16Mx16
84Ball
FBGA
-C5
3.75
5
5
5
Note: -X* is the speed bin, refer to the Operation
Frequency table for complete Part No.
-Y5
3
5
5
5
Unit
Clk
Clk
Clk
Clk
Clk
-Y6
3
6
6
6
Clk
Rev 1.0/July. 2004
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