HMT351S6AFR8C-G7 Datasheet, PDF (4/42 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

HMT351S6AFR8C
1. Description

































This Hynix unbuffered Small Outline Dual In-Line Memory Module (SODIMM) series consists of 2Gb A version DDR3
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 204 pin glass-epoxy substrate. This DDR3 Unbuffered SODIMM
series based on 2Gb A version provide a high performance 8 byte interface in 67.60mm width form factor of industry
standard. It is suitable for easy interchange and addition.
1.1 Device Features & Ordering Information
1.1.1 Features
• VDD=VDDQ=1.5V
• VDDSPD=3.0V to 3.6V
• Fully differential clock inputs (CK, /CK) operation
• Differential Data Strobe (DQS, /DQS)
• On chip DLL align DQ, DQS and /DQS transition with
CK transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)
supported
• Programmable additive latency 0, CL-1 and CL-2 sup-
ported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8 banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 82ball
FBGA(x4/x8) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch
1.1.2 Ordering Information
Part Name
HMT351S6AFR8C-G7/H9*
Density
Organization
# of
DRAMs
# of
ranks
Materials
4GB
512Mx64
16
2
Halogen free
* Please Contact local sales administrator for more details of part number
Rev. 0.02 / Apr. 2009
4