HMT351S6AFR8C-G7 Datasheet, PDF (34/42 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

HMT351S6AFR8C
Table 8 - IDD4W Measurement-Loop Pattern^a)
Data^b)
00
1
2,3
4
5
6,7
1 8-15
2 16-23
3 24-31
4 32-39
5 40-47
6 48-55
7 56-63
WR 0 1 0
0
1
0 00 0
0
0
0
000000
00
D 1 0 0 0 1 0 00 0 0 0 0
-
D,D 1 1 1 1 1 0 00 0 0 0 0
-
WR 0 1 0
0
1
0 00 0
0
F
0
001100
11
D 1 0 0 0 1 0 00 0 0 F 0
-
D,D 1 1 1 1 1 0 00 0 0 F 0
-
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise FLOATING.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are FLOATING.
Rev. 0.02 / Apr. 2009
34