GMS90C320 Datasheet, PDF (31/46 Pages) Hynix Semiconductor – HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS

GMS90C320
AC Characteristics for 12MHz version
External Data Memory Characteristics
Parameter
Symbol
RD pulse width
WR pulse width
Address hold after ALE
RD to valid data in
Data hold after RD
Data float after RD
ALE to valid data in
Address to valid data in
ALE to WR or RD
Address valid to WR or RD
WR or RD high to ALE high
Data valid to WR transition
Data setup before WR
Data hold after WR
Address float after RD
t_{R L R H}
t_{W LW H}
t_{L L A X 2}
t_{R L D V}
t_{RHD X}
t_{RHD Z}
t_{LLD V}
t_{AVD V}
t_{LLW L}
t_{AVW L}
t_{W HLH}
t_{Q VW X}
t_{Q VW H}
t_{W HQ X}
t_{R L A Z}
Advance Information (12MHz)
External Clock Drive
Parameter
Symbol
Oscillator period (V_CC=5V)
Oscillator period (V_CC=3.3V)
High time
Low time
Rise time
Fall time
t_{C L C L}
t_{C L C L}
t_{CHC X}
t_{C L C X}
t_{C L C H}
t_{CHC L}
12 MHz Oscillator
Min.
400
400
127
-
0
-
-
-
200
203
43
33
433
33
-
Max.
-
-
-
252
-
97
517
585
300
-
123
-
-
-
0
Variable Oscillator
1/t_CLCL = 3.5 to 12MHz
Min.
Max.
6t_{C L C L} -100
6t_{C L C L} -100
2t_{C L C L} -40
-
0
-
-
-
5t_{C L C L} -165
-
-
-
-
3t_{C L C L} -50
4t_{C L C L} -130
t_{C L C L} -40
t_{C L C L} -50
7t_{C L C L} -150
t_{C L C L} -50
-
2t_{C L C L} -70
8t_{C L C L} -150
9t_{C L C L} -165
3t_{C L C L} +50
-
t_{C L C L} +40
-
-
-
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Variable Oscillator
(Freq. = 3.5 to 12MHz)
Min.
Max.
83.3
285.7
83.3
1
20
t_{C LCL} - t_{C LC X}
20
t_{C LC L} - t_{CH CX}
-
20
-
20
Unit
ns
ns
ns
ns
ns
OCT. 2000 Ver 1.2
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