HY5DU573222F Datasheet, PDF (23/30 Pages) Hynix Semiconductor – 256M(8Mx32) GDDR SDRAM

1HY5DU573222F(P)
AC OPERATING CONDITIONS (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
VREF + 0.35
0.7
0.5*VDDQ-0.2
Max
VREF - 0.35
VDDQ + 0.6
0.5*VDDQ+0.2
Unit
V
V
V
V
Note
1
2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Reference Voltage
Termination Voltage
AC Input High Level Voltage (VIH, min)
AC Input Low Level Voltage (VIL, max)
Input Timing Measurement Reference Level Voltage
Output Timing Measurement Reference Level Voltage
Input Signal maximum peak swing
Input minimum Signal Slew Rate
Termination Resistor (RT)
Series Resistor (RS)
Output Load Capacitance for Access Time Measurement (CL)
Value
VDDQ x 0.5
VDDQ x 0.5
VREF + 0.35
VREF - 0.35
VREF
VTT
1.5
1
50
25
30
Unit
V
V
V
V
V
V
V
V/ns
Ω
Ω
pF
Rev. 1.1 / May. 2005
23