HY5DU281622ETP-25 Datasheet, PDF (23/34 Pages) Hynix Semiconductor – 128M(8Mx16) gDDR SDRAM

1HY5DU281622ETP
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
36
4
5
Operating Current
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM
IDD0 and DQS inputs changing twice per clock 180
170
160
mA
1
cycle; address and control inputs chang-
ing once per clock cycle
Operating Current
IDD1
Burst length=2, One bank active
tRC ≥ tRC(min), IOL=0mA
180
170
160
mA
1
Precharge Standby Cur-
rent in Power Down
Mode
IDD2P CKE ≤ VIL(max), tCK=min
40
40
40
mA
Precharge Standby Cur-
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK =
rent in Non Power Down IDD2N min, Input signals are changed one time 100
90
Mode
during 2clks
80
mA
Active Standby Current
in Power Down Mode
IDD3P CKE ≤ VIL(max), tCK=min
40
40
40
mA
Active Standby Current
CKE ≥ VIH(min), /CS ≥ VIH(min),
in Non Power Down
IDD3N tCK=min, Input signals are changed one 140
130
120
mA
Mode
time during 2clks
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
280
260
240
mA
1
Auto Refresh Current
IDD5
tRC ≥ tRFC(min),
All banks active
280
260
240
mA
1,2
Self Refresh Current
IDD6 CKE ≤ 0.2V
4
4
4
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4, Refer
to the following page for detailed test
condition
430
410
390
mA
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 1.0 / Oct. 2005
23