HY5DU281622ETP-25 Datasheet, PDF (22/34 Pages) Hynix Semiconductor – 128M(8Mx16) gDDR SDRAM

1HY5DU281622ETP
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
25
26
28
30
33
Operating Current
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min);
IDD0
DQ,DM and DQS inputs changing
twice per clock cycle; address and
230
220
210
200
190 mA
1
control inputs changing once per
clock cycle
Operating Current
IDD1
Burst length=4, One bank active
tRC ≥ tRC(min), IOL=0mA
230 220 210 200 190 mA 1
Precharge Standby
Current in Power Down
Mode
IDD2P CKE ≤ VIL(max), tCK=min
40
40
40
40
40 mA
Precharge Standby
Current in Non Power
Down Mode
IDD2N
CKE ≥ VIH(min), /CS ≥ VIH(min),
tCK = min, Input signals are
changed one time during 2clks
150 140 130 120 110 mA
Active Standby Cur-
rent in Power Down
Mode
IDD3P CKE ≤ VIL(max), tCK=min
40
40
40
40
40 mA
Active Standby Cur-
rent in Non Power
Down Mode
IDD3N
CKE ≥ VIH(min), /CS ≥ VIH(min),
tCK=min, Input signals are
changed one time during 2clks
190 180 170 160 150 mA
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
380 360 340 320 300 mA 1
Auto Refresh Current
IDD5
tRC ≥ tRFC(min),
All banks active
380 360 340 320 300 mA 1,2
Self Refresh Current
IDD6 CKE ≤ 0.2V
4
4
4
4
4
mA
Operating Current -
Four Bank Operation
Four bank interleaving with BL=4,
IDD7 Refer to the following page for
530 510 490 470 450 mA
detailed test condition
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 1.0 / Oct. 2005
22