HY5S2B6DLF-SE Datasheet, PDF (22/26 Pages) Hynix Semiconductor – 4Banks x 2M x 16bits Synchronous DRAM

1HY5S2B6DLF(P)-xE
4Banks x 2M x 16bits Synchronous DRAM
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
Parameter
System Clock
Cycle Time
CAS Latency=3
CAS Latency=2
Clock High Pulse Width
Clock Low Pulse Width
Access Time
From Clock
CAS Latency=3
CAS Latency=2
Data-out Hold Time
Data-Input Setup Time
Data-Input Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time
Command Hold Time
CLK to Data Output in Low-Z Time
CLK to Data Output in
High-Z Time
CAS Latency=3
CAS Latency=2
Symbol
tCK3
tCK2
tCHW
tCLW
tAC3
tAC2
tOH
tDS
tDH
tAS
tAH
tCKS
tCKH
tCS
tCH
tOLZ
tOHZ3
tOHZ2
S
Min Max
9.5 1000
15
3.5
-
3.5
-
-
7
-
8
2.5
-
3.0
-
1.5
-
3.0
-
1.5
-
3.0
-
1.5
-
3.0
-
1.5
-
1.0
-
7.0
8.0
B
Min Max
15 1000
15
3.5
-
3.5
-
-
9
-
9
2.5
-
4.0
-
2.0
-
4.0
-
2.0
-
4.0
-
2.0
-
4.0
-
2.0
-
1.0
-
9
9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
1
1
1
1
1
1
1
1
Note :
1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter.
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns,
then (tR/2-0.5)ns should be added to the parameter.
Rev. 0.3 / Feb. 2005
22