HY5S2B6DLF-SE Datasheet, PDF (19/26 Pages) Hynix Semiconductor – 4Banks x 2M x 16bits Synchronous DRAM

1HY5S2B6DLF(P)-xE
4Banks x 2M x 16bits Synchronous DRAM
CAPACITANCE (TA= 25 ^oC, f=1MHz)
Parameter
Pin
Symbol
Input capacitance
Data input/output capacitance
CLK
A0~A11, BA0, BA1, CKE, CS, RAS, CAS,
WE, UDQM, LDQM
DQ0 ~ DQ15
CI1
CI2
CI/O
S/B
Min Max
2
4.0
Unit
pF
2
4.0
pF
3.5
6.0
pF
DC CHARACTERRISTICS I (TA= -25 to 85^oC)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min
-1
-1.5
VDDQ-0.2
-
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Max
1
1.5
-
0.2
Unit
uA
uA
V
V
Note
1
2
3
4
Rev. 0.3 / Feb. 2005
19