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HMP512U6FFP8C-Y5 Datasheet, PDF (18/25 Pages) Hynix Semiconductor – 240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.
1240pin DDR2 SDRAM Unbuffered DIMMs
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Parameter
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Mode register set command cycle time
Write postamble
Write preamble
Address and control input setup time
Address and control input hold time
Read preamble
Read postamble
Auto-Refresh to Active/Auto-Refresh command
period
Row Active to Row Active Delay for 1KB page size
Row Active to Row Active Delay for 2KB page size
Four Activate Window for 1KB page size
Four Activate Window for 2KB page size
CAS to CAS command delay
Write recovery time
Auto Precharge Write Recovery + Precharge Time
Write to Read Command Delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
Symbol
tDSS
tDSH
tMRD
tWPST
tWPRE
tIS
tIH
tRPRE
tRPST
DDR2-400
Min
Max
0.2
-
0.2
-
2
-
0.4
0.6
0.35
-
350
-
475
-
0.9
1.1
0.4
0.6
DDR2-533
Min
Max
0.2
-
0.2
-
2
-
0.4
0.6
0.35
-
250
-
375
-
0.9
1.1
0.4
0.6
Unit Note
tCK
tCK
tCK
tCK
tCK
ps
ps
tCK
tCK
tRFC
105
-
105
-
ns
tRRD
7.5
-
7.5
-
ns
tRRD
10
-
10
-
ns
tFAW
37.5
-
37.5
-
ns
tFAW
50
-
50
-
ns
tCCD
2
2
tCK
tWR
15
-
15
-
ns
tDAL
WR+tRP
-
tWR+tRP
-
tCK
tWTR
10
-
7.5
-
ns
tRTP
7.5
7.5
ns
tXSNR
tRFC + 10
tRFC + 10
ns
tXSRD
200
-
200
-
tCK
tXP
2
-
2
-
tCK
tXARD
2
2
tCK
tXARDS
6 - AL
6 - AL
tCK
tCKE
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
3
3
tCK
2
tAC(min)
tAC(min)+2
2.5
tAC(min)
2.5
2
tAC(max)+1
2tCK+
tAC(max)+1
2.5
tAC(max)+0
.6
2.5
2
tAC(min)
tAC(min)+2
2.5
tAC(min)
tAC(min)+2
2
tCK
tAC(max)+1 ns
2tCK+tAC(m
ax)+1
ns
2.5
tCK
tAC(max)+
0.6
ns
2.5tCK+tAC(
max)+1
ns
Rev. 0.1 / June 2008
18