HYMP112S64MP8 Datasheet, PDF (10/17 Pages) Hynix Semiconductor – DDR2 SDRAM SO-DIMM

HYMP112S64(L)MP8
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )
Parameter
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Pin
CK0, /CK0
CKE0, /CS
Address, /RAS, /CAS, /WE
DQ,DM,DQS, /DQS
Symbol
CCK
CI1
CI2
CIO
Note :
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Min,
15
44
27
8
Max,
33
65
65
12
Unit
pF
pF
pF
pF
IDD Specifications
HYMP112S64(L)MP8
Parameter
Operating one bank active-precharge current
Operating one bank active-read-precharge
current
Precharge power-down current
Precharge quiet standby current
Precharge standby current
Active power-down current
Active Standby Current
Operating burst read current
Operating Current
Burst auto refresh current
Self Refresh Current
Operating bank interleave read current
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
PC2 3200
max.
920
1000
48
520
560
240
48
720
1320
1320
1560
80
48
1960
PC2 4300
max.
1040
1120
64
600
640
320
64
840
1440
1440
1600
80
48
2160
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Rev. 0.1/ July 2004
10