HY4N65D Datasheet, PDF (4/4 Pages) HY ELECTRONIC CORP. – 650V / 4A N-Channel Enhancement Mode MOSFET

HY4N65D / HY4N65M
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
2.5
V_GS =10 V
I_D =2.0A
2
1.2
I_D = 250mA
1.1
1.5
1
1
0.9
0.5
0
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
0.8
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature
100
V_GS = 0V
10
T_J = 125^oC
1
25^oC
-55^oC
0.1
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV 1.0, 20-Sept-2012
PAGE.4