HY4N65D Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 650V / 4A N-Channel Enhancement Mode MOSFET

HY4N65D / HY4N65M
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
7
6
V_GS= 20V~ 8.0V
5
7.0V
10
V_DS =50V
4
6.0V
1
3
25^oC
2
T_J = 125^oC
5.0V
1
-55^oC
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
0.1
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V_GS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8
12
I_D =2.0A
10
6
8
4
6
V_GS=10V
4
2
V_GS = 20V
2
0
0
2
4
6
I_D - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
0
8
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
Fig.4 On-Resistance vs Gate to Source Voltage
1000
800
f = 1MHz
V_GS = 0V
600
Ciss
400
200
Crss
Coss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
12
I_D =4.0A
10
VDS=520V
VDS=325V
8
VDS=130V
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
REV 1.0, 20-Sept-2012
PAGE.3