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| HY4N65D Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 650V / 4A N-Channel Enhancement Mode MOSFET | |||
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HY4N65D / HY4N65M
Electrical Characteristics ( TC=25â, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
650
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
2.0
-
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=2A
-
2.5
Zero Gate Voltage Drain Current IDSS
VDS=650VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+30VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=520Vï¼ID=4A
VGS=10V
-
16.2
-
3.2
-
5.6
Turn-On Delay Time
td(on)
-
16.8
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=325Vï¼ID=4A
-
36
td(off)
VGS=10Vï¼RG=25W
-
21.8
Turn-Off Fall Time
tf
-
19.2
Input Capacitance
Ciss
-
480
Output Capacitance
Coss
VDS=25Vï¼VGS=0V
f=1.0MHZ
-
65
Reverse Transfer Capacitance
Crss
-
1.3
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Max. Pulsed Source Current
Diode Forward Voltage
ISM
-
VSD
IS=4AãVGS=0V
-
-
-
-
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=4A
Qrr
di/dt=100A/us
-
210
-
0.8
Max.
-
4.0
2.8
10
+100
20
-
-
22
46
32
28
-
-
-
4.0
16
1.4
-
-
Units
V
V
W
uA
nA
nC
ns
pF
A
A
V
ns
uC
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
REV 1.0, 20-Sept-2012
PAGE.2
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