HY4N65D Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 650V / 4A N-Channel Enhancement Mode MOSFET

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650V / 4A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-252 / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY4N65D
4N65D
TO-252 2500PCS/REEL
HY4N65M
4N65M
TO-251 80PCS/TUBE
HY4N65D ^{0F.01I0G. 2S0IN–2.G2MLEAX0I.M4UM05.N6ON10-} / HY4N65M
650V, R_DS(ON)=2.8W@V_GS=10V, I_D=2A
TO-252
TO-251
1
G
2
D
3
S
1
G
2
D
3
S
2 Drain
1
Gate
3 Source
Absolute Maximum Ratings (T_C=25°C unless otherwise specified )
Parameter
Symbol HY4N65D
HY4N65M
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
+30
Continuous Drain Current
T_C=25℃
I_D
4
4
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=25℃
Avalanche Energy with Single Pulse
I_AS=4A, V_DD=150V, L=22.5mH
Operating Junction and Storage Temperature Range
I_DM
P_D
E_AS
T_J, T_STG
16
16
56.8
48
0.46
0.39
180
-55 to +150
Note : 1. Maximum DC current limited by the package
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
R_qJC
R_qJA
HY4N65D
2.2
50
HY4N65M
2.6
110
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
PAGE.1