HY18N20D Datasheet, PDF (4/4 Pages) HY ELECTRONIC CORP. – 200V / 18A N-Channel Enhancement Mode MOSFET

Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
50
1.2
I_D = 250mA
40
1.1
30
1
20
0.9
10
HY18N20D
0
0
25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.7 Power Derating Curve
0.8
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.8 Breakdown Voltage vs Junction Temperature
100
V_GS = 0V
10
T_J = 125^oC
1
25^oC
-55^oC
0.1
0.01
0
0.2 0.4 0.6 0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV.1, 8-May-2012
PAGE.4