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| HY18N20D Datasheet, PDF (2/4 Pages) HY ELECTRONIC CORP. – 200V / 18A N-Channel Enhancement Mode MOSFET | |||
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Electrical Characteristics ( TC=25, Unless otherwise noted )
Parameter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage BVDSS
VGS=0VãID=250uA
200
-
Gate Threshold Voltage
VGS(th)
VDS=VGSãID=250uA
1
-
Drain-Source On-State Resistance RDS(ON)
VGS=10VãID=10A
-
80
Zero Gate Voltage Drain Current IDSS
VDS=160VãVGS=0V
-
-
Gate Body Leakage Current
IGSS
VGS=+24VãVDS=0V
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
26.2
Qgs
VDS=100Vï¼ID=10A
VGS=10V
-
5.8
Qgd
-
11.2
Turn-On Delay Time
td(on)
-
12.2
Turn-On Rise Time
Turn-Off Delay Time
tr
VDD=100Vï¼ID=10A
-
8.6
td(off)
VGS=10Vï¼RG=3.6W
-
26
Turn-Off Fall Time
tf
-
9.2
Input Capacitance
Ciss
-
840
Output Capacitance
Coss
VDS=30Vï¼VGS=0V
f=1.0MHZ
-
55
Reverse Transfer Capacitance
Crss
-
32
Gate Resistance
Rg
-
1.5
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
Diode Forward Voltage
VSD
IS=18AãVGS=0V
-
0.85
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS=0VãIS=18A
Qrr
di/dt=100A/us
-
76
-
265
NOTE : Pulse Test : Pulse Width ⦠300us, duty cycle ⦠2%
HY18N20D
Max. Units
-
V
3
V
92
mW
1
uA
100
nA
-
-
nC
-
-
-
ns
-
-
-
-
pF
-
-
W
18
A
1.4
V
-
ns
-
uC
REV.1, 8-May-2012
PAGE.2
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