HY18N20D Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 200V / 18A N-Channel Enhancement Mode MOSFET

HY18N20D
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
50
140
V_GS= 10V~ 7.0V
V_GS =10 V
40
120
6.0V
30
100
20
5.0V
80
10
4.0V
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
180
I_D =10A
160
140
120
100
80
60
3
4
5
6
7
8
9 10
V_GS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Gate to Source Voltage
1400
1200
f = 1MHz
V_GS = 0V
1000
800
Ciss
600
400
200
Coss
Crss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV.1, 8-May-2012
60
40
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
Fig.2 On-Resistance vs Drain Current
2.2
2
V_GS =10 V
I_D =10A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.4 On-Resistance vs Junction Temperature
12
V_DS=100V
10
I_D =10A
8
6
4
2
0
0
5
10
15
20
25
30
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
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