HY18N20D Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 200V / 18A N-Channel Enhancement Mode MOSFET

200V / 18A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Excellent Gate Charge x R_DS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE
HY18N20D
18N20D
TO-252
PACKING
2.5K/REEL
HY18N20D
200V, R_DS(ON)=92mW@V_GS=10V, I_D=10A
TO-252
2
1
3
2 Drain
1
Gate
3 Source
Absolute Maximum Ratings (T_C=25°C unless otherwise specified )
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=25℃
I_D
I_DM
T_C=25℃
P_D
Avalanche Energy with Single Pulse, L=3mH
E_AS
Operating Junction and Storage Temperature Range
T_J, T_STG
Value
200
+30
18
72
48
0.38
125
-55 to +150
Note : 1. Maximum DC current limited by the package
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R_qJC
R_qJA
Value
2.6
50
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.1, 8-May-2012
PAGE.1