HWL26NPB_V1_15 Datasheet, PDF (5/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=110mA
Po (dBm)
25
PAE (%)
60
20
15
Gain
10
5
50
40
Po
Gain
30
PAE
20
10
0
0
0.7
0.8
0.9
1.0
1.1 f (GHz)
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=110mA
Po (dBm)
30
PAE (%)
60
25
20
15
Gain
10
50
40
Po
Gain
30
PAE
20
5
10
0
0
1.6
1.7
1.8
1.9
2.0
2.1 f (GHz)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.