HWL26NPB_V1_15 Datasheet, PDF (2/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25°C
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=110mA
Po (dBm)
30
25
20
15
10
5
0
1
2
3
4
5
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
PAE (%)
60
50
40
Po
30
PAE
20
10
0
6 Vds (V)
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=110mA
Po (dBm)
30
25
20
15
10
5
0
1
2
3
4
5
PAE (%)
60
50
40
Po
PAE
30
20
10
0
6 Vds (V)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.