HWL26NPB_V1_15 Datasheet, PDF (4/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
Po (dBm)
PAE (%)
25
60
20
15
10
Gain
5
50
40
Po
Gain
30
Eff
20
10
0
0
-8 -6 -4 -2 0 2 4 6 8 10 ^{Pin (dBm)}
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
Po (dBm)
PAE (%)
30
60
25
20
15
Gain
10
50
Po
40
Gain
30
Eff
20
5
10
0
0
0 2 4 6 8 10 12 14 16 18 ^{Pin (dBm)}
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.