HWL26NPB_V1_15 Datasheet, PDF (1/7 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Plastic Packaged GaAs Power FET}
• ^{Suitable for Commercial Wireless}
Applications
• ^{High Efficiency}
• ^{3V to 6V Operation}
Description
The HWL26NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
1
2
3
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current
IG Gate Current
I_DSS
1mA
TCH Channel Temperature
150_°C
TSTG Storage Temperature
-65 to +150_°C
PT Power Dissipation
0.7 W
PB Package (SOT-23)
Electrical Specifications (TA=25_°C) f=1900 MHz for all RF Tests
Symbol
IDSS
V_P
gm
R_th
P_1dB
G_1dB
PAE
Parameters & Conditions
Saturated Current at V_DS=5V, V_GS=0V
Pinch-off Voltage at V_DS=5V, I_D=11mA
Transconductance at V_DS=5V, I_D=110mA
Thermal Resistance
Power Output at Test Points
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Gain at 1dB Compression Point
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=3V, I_D=0.5I_DSS
V_DS=5V, I_D=0.5I_DSS
Units
mA
V
mS
°^C/W
dBm
dB
%
Min.
150
-3.5
-
-
21.0
23.0
9.0
10.0
Typ.
220
-2.0
120
100
21.5
24.5
10.0
11.0
40.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.