HCPL-J314 Datasheet, PDF (8/17 Pages) Agilent(Hewlett-Packard) – 0.4 Amp Output Current IGBT Gate Drive Optocoupler

8
Switching Specifications (AC)
Over recommended operating conditions unless otherwise specified.
Parameter
Propagation Delay Time to
High Output Level
Propagation Delay Time to
Low Output Level
Propagation Delay
Difference Between Any
Two Parts or Channels
Rise Time
Fall Time
Output High Level Common
Mode Transient Immunity
Output Low Level Common
Mode Transient Immunity
Symbol
t_PLH
t_PHL
PDD
t_R
t_F
|CM_H|
|CM_L|
Min.
0.1
0.1
-0.5
10
10
Typ. Max. Units
0.2 0.7 µs
0.3 0.7 µs
0.5 µs
50
ns
50
ns
30
kV/µs
30
kV/µs
Test
Conditions
Rg = 47 Ω,
Cg = 3 nF,
f = 10 kHz,
Duty Cycle =
50%,
I_{F =} 8 mA,
V_CC = 30 V
T_A = 25°C,
V_CM = 1.5 kV
Fig. Note
10,11, 14
12,13,
14,17
10
18 11
18 12
Package Characteristics
For each channel unless otherwise specified.
Parameter
Input-Output Momentary
Withstand Voltage
Output-Output Momentary
Withstand Voltage
Input-Output Resistance
Input-Output Capacitance
Symbol
V_ISO
V_O-O
R_I-O
C_I-O
Min.
3750
1500
Typ.
Max. Units
V_rms
V_rms
Test
Conditions
T_A=25°C,
RH<50% for
1 min.
10¹²
1.2
Ω
V_I-O=500 V
pF Freq=1 MHz
Fig. Note
8,9
15
9
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs
with I_O peak minimum = 0.4 A. See Application section for additional details on limiting I_OL peak.
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, V_OH is measured with a DC load current. When driving capacitive load V_OH will approach V_CC as I_OH approaches zero
amps.
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each HCPL-J314 optocoupler is proof tested by applying an insulation test voltage ≥ 5000 V_rms for
1 second (leakage detection current limit I_I-O ≤ 5 µA). This test is performed before 100% production test for partial discharge
(method B) shown in the IEC/EN/DIN EN 60747-5-2 Insulation Characteristics Table, if applicable.
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between t_PHL and t_PLH between any two parts or channels under the same test conditions.
11. Common mode transient immunity in the high state is the maximum tolerable |dVcm/dt| of the common mode pulse V_CM to
assure that the output will remain in the high state (i.e. Vo > 6.0 V).
12. Common mode transient immunity in a low state is the maximum tolerable |dV_CM/dt| of the common mode pulse, V_CM, to assure
that the output will remain in a low state (i.e. Vo < 1.0 V).
13. This load condition approximates the gate load of a 1200 V/25 A IGBT.
14. For each channel. The power supply current increases when operating frequency and Qg of the driven IGBT increases.
15. Device considered a two terminal device: Channel one output side pins shorted together, and channel two output side pins shorted
together.