AT-32011 Datasheet, PDF (7/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
Freq.
S₁₁
S₂₁
GHz Mag Ang
dB
Mag Ang
dB
S₁₂
Mag
V_CE = 2.7 V, I_C = 20 mA
S₂₂
Ang Mag Ang
0.1
0.52
-49
31.08 35.79 149
0.5
0.36
-138 22.96 14.06 102
0.9
0.34
-168 18.33 8.25
86
1.0
0.34
-174 17.46 7.47
83
1.5
0.34
165 14.13 5.09
71
1.8
0.34
155 12.61 4.27
64
2.0
0.35
148 11.74 3.86
60
2.4
0.36
136 10.23 3.25
52
3.0
0.39
120
8.38
2.62
40
4.0
0.45
98
6.00
2.00
23
5.0
0.52
82
4.25
1.63
7
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, I_C = 20 mA
Freq.
GHz
F_min
dB
Γ_opt
Mag
Ang
0.5^[1]
1.39
0.15
65
0.9
1.51
0.14
105
1.8
1.78
0.28
-164
2.4
1.96
0.40
-142
-37.78
-28.93
-25.15
-24.41
-21.35
-19.92
-19.08
-17.60
-15.86
-13.68
-11.93
R_n
–
0.16
0.13
0.12
0.13
0.013 72
0.036 62
0.055 64
0.060 64
0.086 63
0.101 61
0.111 60
0.132 57
0.161 51
0.207 42
0.253 32
0.83
-22
0.40
-42
0.31
-42
0.30
-42
0.28
-45
0.28
-49
0.27
-52
0.27
-58
0.26
-67
0.24
-84
0.23 -106
30
MSG
20
MAG
S21
10
MSG
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 21. AT-32011 Gains vs.
Frequency at V_CE␣ = 2.7 V, I _C␣ = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V_CE = 2.7 V, I_C = 20 mA
Freq.
S₁₁
S₂₁
S₁₂
S₂₂
GHz Mag Ang
dB
Mag Ang
dB
Mag Ang Mag Ang
0.1
0.50
-35
29.84 31.03 137 -37.08 0.014 77
0.79
-18
0.5
0.16
-52
19.58 9.53
94
-25.35 0.054 77
0.53
-20
0.9
0.08
-36
14.81 5.50
81
-20.63 0.093 75
0.50
-24
1.0
0.07
-31
13.96 4.99
78
-19.66 0.104 74
0.50
-25
1.5
0.06
12
10.71 3.43
66
-16.31 0.153 69
0.49
-31
1.8
0.07
31
9.31
2.92
60
-14.75 0.183 66
0.48
-35
2.0
0.08
40
8.50
2.66
56
-13.85 0.203 63
0.47
-38
2.4
0.11
48
7.16
2.28
48
-12.32 0.242 59
0.46
-44
3.0
0.15
53
5.62
1.91
37
-10.49 0.299 52
0.43
-54
4.0
0.21
52
3.86
1.56
20
-8.11
0.393 41
0.39
-71
5.0
0.26
48
2.61
1.35
6
-6.34
0.482 29
0.33
-91
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, I_C = 20 mA
Freq.
GHz
F_min
dB
Γ_opt
R_n
Mag
Ang
–
30
MSG
20
MAG
0.5^[1]
0.9
1.8
2.4
1.39
0.15
1.51
0.12
1.78
0.28
1.96
0.46
45
0.28
100
0.22
-135
0.14
-107
0.22
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
4-59
10
S21
MSG
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 22. AT-32033 Gains vs.
Frequency at V_CE␣ = 2 .7 V, I_C␣ = 20 mA.