AT-32011 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011, AT-32033 Typical Performance
20
20
20
15
10
5
2 mA
0
5 mA
10 mA
20 mA
-5
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 5 V.
15
15
10
10
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 5 V.
10
2 mA
5 mA
7.5
5
2.5
0
-2.5
-5
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 1 V.
20
15
10
5
2 mA
5 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
20
15
10
5
2 mA
5 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ = 1 V.
25
2.5
25
2.5
25
20
2.0
Ga
15
1.5
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 14. AT-32011 Noise Figure and
Associated Gain at V_CE␣ = 2 .7 V,
I_C␣ =␣ 2␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
20
2.0
20
15
1.5
Ga
10
1.0
NF
5
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 15. AT-32033 Noise Figure and
Associated Gain at V_CE␣ = 2 .7 V,
I_C␣ =␣ 2␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
15
10
2 mA
5
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (MHz)
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at V_CE␣ = 2 .7 V, with Optimal
Tuning.
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