AT-32011 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

Characterization Information, T_A = 25°C
Symbol
P_1dB
G_1dB
IP₃
|S₂₁|_E2
Parameters and Test Conditions
Power at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 20 mA
f = 0.9 GHz
Gain at 1 dB Gain Compression (opt tuning)
V_CE = 2.7 V, I_C = 20 mA
f = 0.9 GHz
Output Third Order Intercept Point (opt tuning)
V_CE = 2.7 V, I_C = 20 mA
f = 0.9 GHz
Gain in 50 Ω System
V_CE = 2.7 V, I_C = 2 mA
f = 0.9 GHz
AT-32011 AT-32033
Units
Typ.
Typ.
dBm
13
13
dB
16.5
15
dBm
24
24
dB
13
11.5
2
25
20
1.5
1
1 mA
2 mA
5 mA
0.5
10 mA
20 mA
0
0 0.5
1
1.5
2
2.5
FREQUENCY (GHz)
20
15
10
1 mA
2 mA
5
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
1 mA
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at V_CE␣ = 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2.7 V.
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V_CE␣ = 2.7 V.
20
20
20
15
10
5
2 mA
0
5 mA
10 mA
20 mA
-5
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V_CE␣ = 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V_CE␣ =2.7 V.
4-55