AT-32011 Datasheet, PDF (2/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011, AT-32033 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum^[1]
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Emitter-Base Voltage
V
Collector-Base Voltage
V
Collector-Emitter Voltage
V
Collector Current
mA
Power Dissipation^{[2, 3]}
mW
Junction Temperature
°C
Storage Temperature
°C
1.5
11
5.5
32
200
150
-65 to 150
Thermal Resistance^[2]:
θ_jc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T_{Mounting Surface} = 25°C.
3. Derate at 1.82 mW/°C for T_C > 40°C.
Electrical Specifications, T_A = 25°C
AT-32011
AT-32033
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
NF Noise Figure
V_CE = 2.7 V, I_C = 2 mA f = 0.9 GHz
dB
1.0^[1] 1.3^[1]
1.0^[2]
G_A Associated Gain
V_CE = 2.7 V, I_C = 2 mA f = 0.9 GHz
dB 12.5^[1] 14^[1]
11^[2] 12.5^[2]
h_FE Forward Current Transfer Ratio
V_CE = 2.7 V, I_C = 2 mA
–
70
300 70
I_CBO Collector Cutoff Current
V_CB = 3 V
µA
0.2
I_EBO Emitter Cutoff Current
V_EB = 1 V
µA
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
1.3^[2]
300
0.2
1.5
1000 pF
RF IN
V_BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
V_CC
1000 pF
W = 30
L = 60
W = 10 L = 1870
CKT A: 25 Ω
CKT B: 5 Ω
RF OUT
W = 10
CKT A: L = 105
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
CKT B: L = 850
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
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