AT-41410 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41410 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.61 -40
27.7 24.38 159
0.5
.60 -127
22.2 12.83 110
1.0
.60 -163
17.1
7.12 86
1.5
.60 179
13.8
4.89 71
2.0
.61 165
11.4
3.72 59
2.5
.61 157
9.7
3.04 52
3.0
.62 149
8.2
2.56 42
3.5
.63 140
7.0
2.23 31
4.0
.62 130
5.9
1.96 20
4.5
.61 120
4.9
1.76 10
5.0
.61 106
4.0
1.59 -1
5.5
.62
94
3.2
1.45 -11
6.0
.66
82
2.4
1.31 -22
dB
-40.0
-30.4
-28.2
-27.5
-26.0
-24.7
-23.9
-22.3
-21.3
-20.4
-18.9
-18.3
-17.5
S₁₂
Mag.
.010
.030
.039
.042
.050
.058
.064
.077
.086
.095
.113
.121
.133
Ang.
75
40
35
45
42
46
50
48
44
41
38
33
30
S₂₂
Mag. Ang.
.94
-13
.62
-33
.50
-38
.46
-42
.45
-48
.44
-52
.44
-58
.46
-68
.48
-78
.50
-85
.52
-91
.52
-97
.51 -105
AT-41410 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 25mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.45 -69
31.4 37.17 150
0.5
.58 -153
23.3 14.63 101
1.0
.59 -178
17.7
7.68 81
1.5
.60 169
14.3
5.21 68
2.0
.60 157
11.9
3.94 56
2.5
.61 151
10.1
3.20 50
3.0
.62 144
8.6
2.70 40
3.5
.63 135
7.4
2.35 30
4.0
.62 126
6.3
2.07 19
4.5
.61 116
5.3
1.85
9
5.0
.61 103
4.5
1.67 -2
5.5
.63
91
3.6
1.52 -12
6.0
.67
80
2.8
1.37 -22
A model for this device is available in the DEVICE MODELS section.
dB
-39.2
-33.6
-30.4
-28.2
-25.8
-24.4
-23.1
-21.9
-20.5
-19.3
-18.5
-17.6
-16.8
S₁₂
Mag.
.011
.021
.030
.039
.051
.060
.070
.080
.094
.108
.119
.131
.144
Ang.
64
43
53
58
55
55
58
54
53
45
41
34
29
S₂₂
Mag. Ang.
.87
-18
.49
-33
.43
-35
.41
-40
.41
-45
.40
-49
.40
-56
.42
-66
.44
-76
.46
-84
.49
-90
.49
-96
.47 -104
AT-41410 Noise Parameters: V_CE = 8 V, I_C = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.2
.12
4
0.5
1.2
.10
23
1.0
1.3
.06
49
2.0
1.6
.26
172
4.0
3.0
.46
-133
R_N/50
0.17
0.17
0.16
0.16
0.26
4-107