AT-41410 Datasheet, PDF (3/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41410 Typical Performance, T_A = 25°C
24
24
21
GA
18
15
12
9
20
16 ^P1dB
8
6
12
2.0 GHz
4.0 GHz
2.0 GHz
6
4
NF50 Ω
3
2
NF_O
0
0
0.5
1.0
2.0 3.0 4.0 5.0
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V_CE = 8 V, I_C = 10mA.
G1 dB
8
4.0 GHz
4
0
10
20
30
40
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V_CE = 8 V.
16
14
2.0 GHz
12
10 ^GA
8
4.0 GHz
6
4.0 GHz
4
NFO
2.0 GHz
2
0
0
10
20
30
40
I_C (mA)
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V_CE = 8 V.
40
35
30
MSG
25
20
15
MAG
|S21E|²
10
5
0
0.1
0.3 0.5 1.0
3.0 6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V_CE = 8 V, I_C = 25 mA.
16
15
14
13 ^GA
10 V
6V
4V
12
4
4V
6V
3
10 V
2
NF_O
1
0
10
20
30
40
IC (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
20
1.0 GHz
16
11
2.0 GHz
8
4.0 GHz
4
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V_CE = 8 V.
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