AT-41410 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41410 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum^[1]
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Emitter-Base Voltage
V
Collector-Base Voltage
V
Collector-Emitter Voltage
V
Collector Current
mA
Power Dissipation ^[2,3]
mW
Junction Temperature
°C
Storage Temperature
°C
1.5
20
12
60
500
200
-65 to 200
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 5.9 mW/°C for T_C > 115°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θ_jc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance^[2,4]:
θ_jc = 170°C/W
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
|S_21E|² Insertion Power Gain; V_CE = 8 V, I_C = 25 mA
Units Min. Typ. Max.
f = 2.0 GHz dB
12.0
f = 4.0 GHz
6.5
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 25 mA
f = 2.0 GHz dBm
19.0
f= 4.0 GHz
18.5
G_{1 dB} 1 dB Compressed Gain; V_CE = 8 V, I_C = 25 mA
f = 2.0 GHz dB
14.0
f = 4.0 GHz
9.5
NF_O Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA
G_A
Gain @ NFO; V_CE = 8 V, IC = 10 mA
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
1.3
1.6 1.9
3.0
f = 1.0 GHz dB
18.5
f = 2.0 GHz
13.0 14.0
f = 4.0 GHz
10.0
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 25 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 10 mA
I_CBO Collector Cutoff Current; V_CB = 8 V
I_EBO Emitter Cutoff Current; V_EB = 1 V
C_CB
Collector Base Capacitance^[1]: V_CB = 8 V, f = 1 MHz
GHz
— 30
µA
µA
pF
8.0
150 270
0.2
1.0
0.2
Notes:
1. For this test, the emitter is grounded.
4-105