AT-41410 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41410
Features
• Low Noise Figure:
1.6 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.0 dB Typical at 2.0␣ GHz
10.0 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Hermetic, Gold-ceramic
Microstrip Package
Description
Hewlett-Packard’s AT-41410 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41410 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 14 emitter finger
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is de-
signed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50␣ Ω
at 1 GHz , makes this device easy
to use as a low noise amplifier.
100 mil Package
The AT-41410 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8923E
4-104