AMMC-3040 Datasheet, PDF (2/6 Pages) Agilent(Hewlett-Packard) – 18-36 GHz Double-Balanced Mixer with Integrated LO Amplifier/Multiplier

AMMC-3040 DC Specifications/Physical Properties^[1]
Symbol
Parameters and Test Conditions
Units Min.
Typ.
Max.
V_{D1, 2, 3, 4} Drain Supply Operating Voltage
V
2
3.5
5
I_d1
First Stage Drain Supply Current
V_dd = 3.5 V, V_g1 = −0.5 V
mA
50
I_{D2, 3, 4}
Total Drain Supply Current for Stages 2, 3 and 4
mA
225
(V_dd = 3.5 V, V_gg = −0.5 V)
V_{G1, 2, 3, 4} Gate Supply Operating Voltages (I_dd = 250 mA)
V
-0.5
V_p
Pinch-off Voltage (V_dd = 3.5 V, I_dd < 10 mA
V
-1.5
θ_ch-b
Thermal Resistance^[2] (Backside Temp. T_b= 25°C)
°C/W
49
Notes:
1. Measured in wafer form with T_chuck = 25°C. (Except θch-bs.)
2. Channel-to-backside Thermal Resistance (θch-b)=58°C/Ω at Tchannel (Tc)=150 °C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T_b)=25 °C calculated from measured data.
AMMC-3040 RF Specifications
Zo=50 Ω, Tb = 25°C, IF Output = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
Symbol
Parameters and Test Conditions
Lc
Lc
ISOL _L-R
P_{−1 dB}
IIP3
Conversion Loss, Down Conversion ^[1]
Conversion Loss, Up Conversion ^[2]
LO - RF Isolation at RF Frequency = 22 GHz ^[3]
Input Power at 1 dB Conversion Loss
Compression, Down Conversion
Input 3^rd Order Intercept Point,
Down Conversion at RF Frequency = 22 GHz ^[4]
Notes:
1. 100% on-wafer RF testing is done at RF frequency = 18, 22, and 32 GHz.
2. IF Input = 2 GHz, IF Input Power = -20 dBm, RF freq = LO + IF
3. Does not include LO amplifier gain of ~20 dB.
4. ∆f = 2 MHz, RF Input Power = -5 dBm.
Units
dB
dB
dB
dBm
V dd =3.5 V,
I dd =250 mA
Typ. Max.
9.5 12
10
31
17
V dd =4.5 V,
I dd =150 mA
Typ.
10
10.5
32
17
dBm
23
22
2