HX6228 Datasheet, PDF (7/12 Pages) Honeywell Solid State Electronics Center – 128K x 8 STATIC RAM-SOI HX6228

WRITE CYCLE AC TIMING CHARACTERISTICS (1)
HX6228
Symbol
Parameter
Typical
(2)
Worst Case (3)
-55 to 125°C
Min
Max
Units
TAVAVW Write Cycle Time (4)
13
25
ns
TWLWH Write Enable Write Pulse Width
9
20
ns
TSLWH Chip Select to End of Write Time
12
20
ns
TDVWH Data Valid to End of Write Time
9
15
ns
TAVWH Address Valid to End of Write Time
10
20
ns
TWHDX Data Hold Time after End of Write Time
0
0
ns
TAVWL Address Valid Setup to Start of Write Time
0
0
ns
TWHAX Address Valid Hold after End of Write Time
0
0
ns
TWLQZ Write Enable to Output Disable Time
5
0
9
ns
TWHQX Write Disable to Output Enable Time
12
5
ns
TWHWL Write Recovery Time
4
5
ns
TEHWH Chip Enable to End of Write Time
11
20
ns
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading >50 pF, or equivalent capacitive
load of 5 pF for TWLQZ.
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 125°C, post total dose at 25°C.
(4) TAVAVW = TWLWH + TWHWL.
ADDRESS
NWE
TAVWL
TWHWL
DATA OUT
HIGH
IMPEDANCE
TWLQZ
TAVAVW
TAVWH
TWLWH
TDVWH
TWHAX
TWHQX
TWHDX
DATA IN
DATA VALID
NCS
CE
TSLWH
TEHWH
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