HX6228 Datasheet, PDF (5/12 Pages) Honeywell Solid State Electronics Center – 128K x 8 STATIC RAM-SOI HX6228

HX6228
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDDSB Static Supply Current
Typical Worst Case (2)
(1) Min Max
0.4
2.0
IDDSBMF Standby Supply Current - Deselected
0.4
2.0
IDDOPW Dynamic Supply Current, Selected (Write)
4.5
6.0
IDDOPR Dynamic Supply Current, Selected (Read)
2.8
4.5
II
Input Leakage Current
-5 +5
IOZ
Output Leakage Current
-10 +10
VIL
Low-Level Input Voltage
CMOS 1.7
TTL
0.3xVDD
0.8
Units
Test Conditions
mA
VIH=VDD, IO=0,
VIL=VSS, f=0MHz
mA
NCS=VDD, IO=0,
f=40 MHz,
mA
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
mA
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
µA VSS≤VI≤VDD
µA
VSS≤VIO≤VDD
Output=high Z
V March Pattern
V VDD = 4.5V
VIH
High-Level Input Voltage
CMOS
TTL
3.2 0.7xVDD
2.2
V March Pattern
V VDD = 5.5V
VOL
Low-Level Output Voltage
0.3
0.005
0.4
V VDD = 4.5V, IOL = 10 mA
0.1
V VDD = 4.5V, IOL = 200 µA
VOH
High-Level Output Voltage
4.3 4.2
4.5 VDD-0.1
V VDD = 4.5V, IOH = -5 mA
V VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
2.9 V
249
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5