HMC757LP4E Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC WATT POWER AMPLIFIER, 16 - 24 GHz

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Outline Drawing
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
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Package Information
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
Part Number
Package Body Material
Lead Finish
HMC757LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL1 ^[2]
Package Marking ^[1]
H757
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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